2sd2118 5a , 50v npn plastic encapsulated transistor elektronische bauelemente 18-nov-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 3 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features low v ce(sat) . v ce(sat) = 0.25v(typ.) (i c /i b = 4a / 0.1a) excellent dc current gain characteristics classification of h fe product-rank 2sd2118-q 2sd2118-r range 120~270 180~390 package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo 50 v collector to emitter voltage v ceo 20 v emitter to base voltage v ebo 6 v collector current -continuous i c 5 a collector power dissipation p c 1 w junction and storage temperature range t j ,t stg 150 , -55~150 c electrical characteristics (t a =25c unless otherwise noted) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 50 - - v i c =50 a, i e =0 collector-emitter breakdown voltage v (br)ceo 20 - - v i c =1ma, i b =0 emitter-base breakdown voltage v (br)ebo 6 - - v i e =50 a, i c =0 collector cut-off current i cbo - - 0.5 a v cb =40v, i e =0 emitter cut-off current i ebo - - 0.5 a v eb =5v, i c =0 dc current gain h fe 120 - 390 v ce =2v, i c =500ma collector-emitter saturation voltage v ce(sat) - - 1 v i c =4a, i b =100ma transition frequency f t - 150 - mhz v ce =6v, i c =50ma, f=100mhz collector output capacitance c ob - 30 - pf v cb =20v, i e =0, f=1mhz a c d n o p g e f h k j m b d-pack (to-252) ref. millimeter ref. millimeter min. max. min. max. a 6. 35 6.8 j 2.30 ref. b 5.20 5.50 k 0. 64 0.90 c 2. 15 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1. 6 5 e 6.8 7. 5 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 5 h 0. 64 1.20
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